The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.5 Semiconductor devices and related techologies

[11p-A23-1~13] 13.5 Semiconductor devices and related techologies

Wed. Mar 11, 2015 2:00 PM - 5:30 PM A23 (6A-216)

4:00 PM - 4:15 PM

[11p-A23-8] Charge Pumping (CP) Characteristics of Single Si/SiO2 Interface Traps: Direct and Electrical Observation of Pb0 Centers and Fundamental Improvement of the Conventional CP Theory

〇Toshiaki Tsuchiya1, Yukinori Ono2 (1.Shimane Univ., 2.Univ. of Toyama)

Keywords:MOS interface trap,charge pumping,Pb center