The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.9 Optical properties and light-emitting devices

[11p-A25-1~15] 13.9 Optical properties and light-emitting devices

Wed. Mar 11, 2015 1:30 PM - 5:30 PM A25 (6A-218)

2:00 PM - 2:15 PM

▲ [11p-A25-3] Growth and Characterization of GaN/Eu-Doped GaN Nanolayer Structures by Low-Temperature Organometallic Vapor Phase Epitaxy

〇Wanxin ZHU1, Dolf Timmerman1, Atsushi Koizumi1, Yasufumi Fujiwara1 (1.Osaka Univ.)

Keywords:Rare earth,GaN