The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.9 Optical properties and light-emitting devices

[11p-A25-1~15] 13.9 Optical properties and light-emitting devices

Wed. Mar 11, 2015 1:30 PM - 5:30 PM A25 (6A-218)

2:45 PM - 3:00 PM

[11p-A25-6] Enhancement of emission efficiency of GaN:Eu red LED: Resonant charge injection using pulse drive

〇Masashi Ishii1, Atsushi Koizumi2, Yasufumi Fujiwara2 (1.NIMS, 2.Osaka Univ.)

Keywords:Rare-earth doped semiconductor,LED,Pulse