The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11p-B1-1~20] 15.4 III-V-group nitride crystals

Wed. Mar 11, 2015 1:15 PM - 6:45 PM B1 (6B-101)

4:00 PM - 4:15 PM

△ [11p-B1-11] Wetting angle measurement of nitrided sapphire by Ga-Al melts using sessile drop method

〇Masayoshi Adachi1, Kosuke Yasutake2, Noritaka Saito2, Kunihiko Nakashima2, Masashi Sugiyama3, Junji Iida3, Hiroyuki Fukuyama1 (1.Tohoku Univ., 2.Kyushu Univ., 3.Sumitomo Metal Mining Co., Ltd)

Keywords:AlN,Ga-Al liquid phase epitaxy