The 62nd JSAP Spring Meeting, 2015

Presentation information

Print

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11p-B1-1~20] 15.4 III-V-group nitride crystals

Wed. Mar 11, 2015 1:15 PM - 6:45 PM B1 (6B-101)

5:00 PM - 5:15 PM

[11p-B1-14] Numerical analysis of the effect of excitation condition on energy relaxation processes of carriers and excitons in GaN

〇Bei Ma1, Ken Morita1, Yoshihiro Ishitani1 (1.Chiba Univ.)

Keywords:GaN,exciton