The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11p-B1-1~20] 15.4 III-V-group nitride crystals

Wed. Mar 11, 2015 1:15 PM - 6:45 PM B1 (6B-101)

5:45 PM - 6:00 PM

[11p-B1-17] Influence of Eu concentration in Eu and Mg co-doped GaN on luminescent site

〇(M1)TAKUHO KAMADA1, HIROTO SEKIGUCHI1, KEISUKE YAMANE1, HIROSHI OKADA1, 2, AKIHIRO WAKAHARA1 (1.Toyohashi Univ. Tech., 2.Electronocs-Inspired Interdisciplinary Research Institute(EIIRIS))

Keywords:rare earth doped semiconductor,GaN,Eu