The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11p-B1-1~20] 15.4 III-V-group nitride crystals

Wed. Mar 11, 2015 1:15 PM - 6:45 PM B1 (6B-101)

2:15 PM - 2:30 PM

[11p-B1-5] Thick GaN growth on SiNx intermediate layer using Hydride Vapor Phase Epitaxy

〇Takashi Inagaki1, Yasumasa Okamura1, Keisuke Yamane2, Narihito Okada1, Kazuyuki Tadatomo1 (1.Yamaguchi Univ., 2.Toyohashi Univ.)

Keywords:GaN,HVPE,dislocation