[11p-B1-1~20] 15.4 III-V-group nitride crystals

[11p-B1-8] The dependence of GaN surface molphology on carbon concentration using a high Ga composition Na flux

〇Shogo Ogawa¹, Masayuki Imanishi¹, Yuma Todoroki¹, Kosuke Murakami¹, Hiroki Imabayashi¹, Daisuke Matsuo¹, Hideo Takazawa¹, Mihoko Maruyama¹, Mamoru Imade¹, Masashi Yoshimura¹, Yusuke Mori¹ (1.Osaka Univ.)

Keywords:GaN,Na-Flux