[11p-D1-1~17] 合同セッションＫ ワイドギャップ酸化物半導体材料・デバイス

▼ [11p-D1-17] Low temperature excimer laser annealing of a-InGaZnO thin-film transistors passivated by hybrid organic-inorganic passivation layer

〇(D)Juan Paolo Bermundo¹, Yasuaki Ishikawa¹, Mami Fujii¹, Michiel van der Zwan², Hiroshi Ikenoue³, Ryoichi Ishihara², Toshiaki Nonaka⁴, Yukiharu Uraoka¹ (1.Nara Inst. of Sci. and Tech., 2.Delft Univ. of Tech., 3.Kyushu Univ., 4.AZ Elect. Mat.)

キーワード：Excimer laser annealing,amorphous InGaZnO,hybrid passivation layer