[11p-P1-1~58] 10 スピントロニクス・マグネティクス（ポスター）

[11p-P1-4] Optimization of IrMn thickness and annealing temperature to realize magnetic tunnel junctions for magnetic sensor devices

〇Gou Kimura¹, Kousuke Fujiwara¹, Mikihiko Oogane¹, Hiroshi Naganuma¹, Yasuo Ando¹ (1.Tohoku Univ.)

Keywords:magnetic field sensor,induced magnetic anisotropy