[11p-P2-1~15] 15.6 Group IV Compound Semiconductors

[11p-P2-11] Radiation Hardness Characteristics of SiC MOSFETs Irradiated with Gamma-rays at Elevated Temperature

〇Takuma Matsuda^{1, 2}, Takashi Yokoseki^{1, 2}, Satoshi Mitomo^{1, 2}, Koichi Murata^{1, 2}, Takahiro Makino², Hiroshi Abe², Shinobu Onoda², Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Takeshi Ohshima², Yasuto Hijikata¹ (1.Saitama Univ., 2.JAEA, 3.Sanken Electric Co., Ltd.)

Keywords:Silicon Carbide,MOSFET,Gamma-rays