[11p-P2-1~15] 15.6 Group IV Compound Semiconductors

△ [11p-P2-15] Injection of minority carrriers in 4H-SiC/Si HBT structures by using surface-activated bonding

〇(B)SAE SHIMIZU¹, SYOTA NISHIDA¹, JIANBO LIANG¹, MASASI MORIMOTO¹, NAOTERU SHIGEKAWA¹, MANABU ARAI² (1.Osaka City Univ., 2.New Japan Radio Co., Ltd.)

Keywords:SiC,HBT,surface-activated bonding