[11p-P2-1~15] 15.6 Group IV Compound Semiconductors

[11p-P2-4] Rapid Growth of SiC Films on Si Substrates Covered with Natural Oxide Using Monomethylsilane (II).

〇Shinpei Yamada¹, Yuzuru Narita¹, Kensuke Nakajima¹, Masamichi Naitoh², Maki Suemitsu³ (1.Yamagata Univ., 2.Kyushu Inst. Tech., 3.RIEC, Tohoku Univ.)

Keywords:silicon carbide