[11p-P2-1~15] 15.6 Group IV Compound Semiconductors

[11p-P2-7] Electron Microscopy Analysis of Extended Dislocation of 4H-SiC

〇Takahiro Sato¹, Yoshihiro Ohtsu², Yoshihisa Orai¹, Toshiyuki Isshiki³, Munetoshi Fukui¹ (1.Hitachi High-Technologies, 2.Hitachi High-Tech Manufacturing & Service, 3.Kyoto Institute of Technology)

Keywords:4H-SiC,Electron microscope,BPD