[12a-A21-1~13] 13.8 Compound and power electron devices and process technology

△ [12a-A21-11] In situ Photoemission Study of Interface Reaction in Al/Ti/n-GaN Structures

〇Joyo Ito¹, Ryohei Asahara¹, Mikito Nozaki¹, Satoshi Nakazawa², Masahiro Ishida², Tetsuzo Ueda², Akitaka Yoshigoe³, Yuden Teraoka³, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Panasonic, 3.JAEA)

Keywords:Gallium Nitride,Ohmic Contact,Synchrotron Radiation