[12a-A21-1~13] 13.8 Compound and power electron devices and process technology

[12a-A21-12] Reduction of contact resistance on AlGaN/GaN HEMT structures by introducing uneven AlGaN layers

〇Yusuke Takei¹, Shimoda Tomohiro¹, Kazuo Tsutsui¹, Wataru Saito², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka¹, Hiroshi Iwai¹ (1.Tokyo Inst. Technol., 2.Toshiba)

Keywords:AlGaN,uneven structure,ohmic contact