[12a-A21-1~13] 13.8 Compound and power electron devices and process technology

[12a-A21-2] Influence of gate metal electrode on leakage current for AlGaN/GaN HEMT

〇kazuki ohga¹, Takamasa Kawanago², Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (1.Tokyo Tech. FRC, 2.Tokyo Tech. IGSSE)

Keywords:AlGaN/GaN,Schottky