[12a-A21-1~13] 13.8 Compound and power electron devices and process technology

[12a-A21-4] Mapping of crystalline of ion-implanted n-GaN Schottky contacts using scanning internal photoemission microscopy

〇Shingo Yamamoto¹, Shingo Murase¹, Takeshi Tanaka^{1, 2}, Tomoyoshi Mishima², Toru Nakamura³, Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hitachi Metal, 3.Hosei Univ.)

Keywords:scanning internal photoemission microscopy,Shottky contact,GaN