The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[12a-A21-1~13] 13.8 Compound and power electron devices and process technology

Thu. Mar 12, 2015 9:00 AM - 12:30 PM A21 (6A-213)

10:15 AM - 10:30 AM

△ [12a-A21-6] Edge effect of anode electrode on forward characteristics of GaN schottky barrier diodes

〇daichi yoshikawa1, yutarou yamaguchi2, koji yamanaka2, toshiyuki oishi1 (1.Saga Univ., 2.Mitsubishi Electric.)

Keywords:GaN