[12a-A23-1~12] 13.6 Semiconductor English Session

▲ [12a-A23-4] Non-destructive Characterization of Oxide/Ge Interface by Photoluminescence Measurement

〇Shoichi Kabuyanagi^{1, 2}, Tomonori Nishimura^{1, 2}, Takeaki Yajima^{1, 2}, Akira Toriumi^{1, 2} (1.Tokyo Univ., 2.JST-CREST)

キーワード：Germanium,Photoluminescence,Interface