[12a-B4-1~10] 15.6 Group IV Compound Semiconductors

[12a-B4-1] Influence of Sn addition in SiCrAl solvent in 4H-SiC solution growth

〇Naoyoshi Komatsu¹, Takeshi Mitani^{1, 2}, Tetsuo Takahashi^{1, 2}, Tomohisa Kato^{1, 2}, Toru Ujihara³, Yuji Matsumoto⁴, Kazuhisa Kurashige^{1, 5}, Hajime Okumura^{1, 2} (1.FUPET, 2.AIST, 3.Nagoya Univ., 4.Tohoku Univ., 5.Hitachi Chemical Co., Ltd.)

Keywords:solution growth,additive,surface morphology