The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[12a-B4-1~10] 15.6 Group IV Compound Semiconductors

Thu. Mar 12, 2015 9:00 AM - 11:45 AM B4 (6B-104)

11:30 AM - 11:45 AM

△ [12a-B4-10] Analysis of gate bias dependent carrier distribution of cross-sectioned SiC-DMOSFET by ac biasing using super-higher-order SNDM

〇Norimichi Chinone1, Cho Yasuo1 (1.Tohoku Univ.)

Keywords:SiC power device,SNDM,device evaluation