[12a-B4-1~10] 15.6 Group IV Compound Semiconductors

[12a-B4-2] Correlation between threading dislocation conversion during SiC solution growth and macrosteps on the growth surface

〇Shunta Harada¹, Shiyu Xiao¹, Kenta Aoyagi¹, Kenta Murayama¹, Takenobu Sakai¹, Miho Tagawa¹, Toru Ujihara¹ (1.Nagoya Univ.)

Keywords:solution growth,Dislocation