The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[12a-B4-1~10] 15.6 Group IV Compound Semiconductors

Thu. Mar 12, 2015 9:00 AM - 11:45 AM B4 (6B-104)

9:30 AM - 9:45 AM

[12a-B4-3] Generation and suppression of interfacial dislocations in SiC epitaxial film growth using a horizontal CVD reactor

〇Chiaki Kudou1, 2, Keiko Masumoto1, 5, Hirokuni Asamizu1, 3, Kentaro Tamura1, 3, Johji Nishio1, 4, Kazutoshi Kojima1, 5, Toshiyuki Ohno1, 6 (1.FUPET, 2.Panasonic, 3.ROHM, 4.Toshiba, 5.AIST, 6.Hitachi)

Keywords:SiC,epitaxial,interfacial dislocations