The 62nd JSAP Spring Meeting, 2015

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6 Thin Films and Surfaces » 6.3 Oxide electronics

[12a-D10-1~10] 6.3 Oxide electronics

Thu. Mar 12, 2015 9:00 AM - 11:45 AM D10 (16-305)

10:00 AM - 10:15 AM

△ [12a-D10-5] Electrical characteristics of InSiO-based channel materials by co-sputtering method

〇(M1)Kazunori Kurishima1, 2, Toshihide Nabatame2, Nobuhiko Mitoma2, Takio Kizu2, Kazuhito Tsukagoshi2, Tomomi Sawada2, Akihiko Ohi2, Ippei Yamamoto2, 3, Tomoji Ohishi3, Toyohiro Chikyow2, Atsushi Ogura1 (1.Meiji Univ., 2.NIMS WPI-MANA, 3.Shibaura Inst.)

Keywords:co-sputtering,In,InSiO