[12a-D5-1~8] 15.5 Group IV crystals and alloys

[12a-D5-4] Fabrication of compressively strained Si/relaxed Si_1-xC_x heterostructures utilizing Ar ion implantation technique

〇You Arisawa¹, Hoshi Yusuke¹, Fujiwara Kousuke², Yamanaka Junji², Arimoto keisuke², Nakagawa Kiyokazu², Sawano Kentarou³, Usami Noritaka¹ (1.Nagoya Univ., 2.Univ. of Yamanashi, 3.Tokyo City Univ.)

Keywords:compressively strained Si,SiC film,ion implantation