The 62nd JSAP Spring Meeting, 2015

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Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[12a-D5-1~8] 15.5 Group IV crystals and alloys

Thu. Mar 12, 2015 10:00 AM - 12:00 PM D5 (16-205)

11:45 AM - 12:00 PM

[12a-D5-8] Improvements of electrical properties of wafer-bonded GeOI substrates with ultrathin Al2O3/SiO2 BOX layers by post-annealing

〇Keisuke Yoshida1, Yoshiaki Nakamura1, Shotaro Takeuchi1, Yoshihiko Moriyama1, 2, Tsutomu Tezuka2, Akira Sakai1 (1.Osaka Univ., 2.GNC-AIST)

Keywords:GeOI,Al2O3