[12a-P13-1~11] 13.5 Semiconductor devices and related techologies

[12a-P13-6] SiGe buried channel p-MOSFET formed by sputter epitaxy

〇Takehiko Sakurazawa¹, Takahiro Tsukamoto¹, Nobumitsu Hirose², Akifumi Kasamatsu², Toshiaki Matsui², Takashi Mimura², Yoshiyuki Suda¹ (1.Tokyo Univ. of Agric. & Technol., 2.National Inst. of Inf. and Commun. Technol.)

Keywords:SiGe,sputter epitaxy