[12p-A17-1~19] 3.13 Semiconductor optical devices

[12p-A17-6] Current injection characteristics of modulation doped InAs/InP double capped quantum dots structure

〇(M1)Toshiki Sukigara¹, Yuta Yamamoto¹, Tetsuo Nishiyama¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:quantum dots,double cap,modulation doped