[12p-A21-1~13] 13.8 Compound and power electron devices and process technology

[12p-A21-13] Improved Current Collapse in AlGaN/GaN HEMTs with 3-Dimensional Field Plate Structure

〇atsuya suzuki¹, Kosuke Akira¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

Keywords:AlGaN/GaN HEMT,Current Collapse,3DFP