The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[12p-A21-1~13] 13.8 Compound and power electron devices and process technology

Thu. Mar 12, 2015 2:00 PM - 5:30 PM A21 (6A-213)

2:15 PM - 2:30 PM

[12p-A21-2] Normally-off type AlGaN/GaN MOSFETs with Regrown Recessed-gate Structures

〇Satoshi Nakazawa1, Nanako Shiozaki1, Noboru Negoro1, Naohiro Tsurumi1, Yoshiharu Anda1, Masahiro Ishida1, Tetsuzo Ueda1 (1.Panasonic Corporation)

Keywords:GaN,MOSFET