The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[12p-A21-1~13] 13.8 Compound and power electron devices and process technology

Thu. Mar 12, 2015 2:00 PM - 5:30 PM A21 (6A-213)

2:30 PM - 2:45 PM

△ [12p-A21-3] Effects of oxygen annealing process on GaN MOS interface properties

〇Joji Ohira1, Yutaka Senzaki1, Zenji Yatabe1, 2, Tamotsu Hashizume1, 2 (1.RCIQE, Hokkaido Univ., 2.JST-CREST)

Keywords:Gallium nitride,Oxygen annealing process,Interface states