[12p-A21-1~13] 13.8 Compound and power electron devices and process technology

△ [12p-A21-7] Analysis of bulk traps in AlGaN layer of AlGaN/GaN HEMT

〇(M1)TOSHIYUKI BABA¹, YUICHI NAGAHISA², TAKAMASA KAWANAGO², KUNIYUKI KAKUSHIMA², YOSHINORI KATAOKA², AKIRA NISHIYAMA², NOBUYUKI SUGII², HITOSHI WAKABAYASHI², KAZUO TSUTSUI², KENZI NATORI¹, HIROSHI IWAI¹ (1.Tokyo Tech. FRC, 2.Tokyo Tech. IGSSE)

Keywords:nitride semiconductor electronic device