[12p-A24-1~7] 13.7 Quantum properties and fabrications of nanoscale structures and devices

△ [12p-A24-3] Temperature and barrier thickness dependence of GaAs/AlGaAs tunneling bi-quantum-well

〇Takanori Aritake¹, Ryo Harasawa¹, Yuya Yasue¹, Hao Wu¹, Shunichi Muto², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Hokkaido Univ.)

Keywords:quantum well,GaAs/AlGaAs