[12p-A24-1~7] 13.7 Quantum properties and fabrications of nanoscale structures and devices

[12p-A24-6] Analysis of resistance switching characteristics of resonant-tunneling quantum-well structures using CaF₂/CdF₂/CaF₂ heterostructure

〇(DC)KEITA SUDA¹, Yuya Kuwata¹, Masahiro Watanabe¹ (1.Tokyo Inst. Tech.)

Keywords:quantum well,nonvolatile memory,quantum effect