[12p-A27-1~15] 13.1 Fundamental properties, surface and interface, and simulations ofSi related materials

[12p-A27-7] First-Principles calculation of defect levels and defect-formation energies in 4H-SiC

〇Nobuhiko Kato¹, Kazuyuki Okazaki¹, Hideaki Koike¹ (1.AdvanceSoft.Corp)

Keywords:4H-SiC,first-principles calculation,lattice defects