The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[12p-B1-1~23] 15.4 III-V-group nitride crystals

Thu. Mar 12, 2015 1:15 PM - 7:45 PM B1 (6B-101)

4:15 PM - 4:30 PM

△ [12p-B1-11] Electrical properties of high carrier concentration n-type AlGaN

〇Kunihiro Takeda1, Kazuki Mori1, Tomoaki Yamada1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Isamu Akasaki1, 2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ.)

Keywords:Electrical properties,n-AlGaN