The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[12p-B1-1~23] 15.4 III-V-group nitride crystals

Thu. Mar 12, 2015 1:15 PM - 7:45 PM B1 (6B-101)

4:30 PM - 4:45 PM

[12p-B1-12] Growth of AlGaN (0001) epitaxial layer on Ga2O3 (-201) substrate

〇YOSHIKATSU MORISHIMA1, HIRAYAMA HIDEKI2, YAMASHITA YOSHIHIRO1, IIZUKA KAZUYUKI1, KURAMATA AKITO1, YAMAKOSHI SHIGENOBU1 (1.Tamura Corporation, 2.RIKEN)

Keywords:AlGaN,Ga2O3