The 62nd JSAP Spring Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[12p-B1-1~23] 15.4 III-V-group nitride crystals

Thu. Mar 12, 2015 1:15 PM - 7:45 PM B1 (6B-101)

7:15 PM - 7:30 PM

[12p-B1-22] TEM evaluation of low-temperature GaN buffer layer grown on sapphire substrate

〇Tohoru Matsubara1, 2, Kouhei Sugimoto1, Narihito Okada1, Kazuyuki Tadatomo1 (1.Yamaguchi Univ., 2.UBE Sci. Analysis Lab.)

Keywords:gallium nitride,threading dislocation,stacking fault