[12p-B1-1~23] 15.4 III-V-group nitride crystals

[12p-B1-5] Fabrication of high-quality AlN buffer layer for deep-UV LEDs grown on wet chemical etched patterned sapphire substrate

〇Yuuya Kanazawa^{1, 2}, Shiro Toyoda^{1, 2}, Issei Ohsima^{1, 2}, Norihiko Kamata², Yukio Kashima³, Eriko Matsuura³, Satoshi Shimatani⁴, Mitsunori Kokubo⁵, Takaharu Tashiro⁵, Takafumi Ohkawa⁵, Ryuichiro Kaminura⁶, Yamato Osada⁶, Hideki Hirayama¹ (1.RIKEN, 2.Saimata Univ., 3.MARUBUN, 4.TOKYO OHKA KOGYO, 5.TOSHIBA MACHINE, 6.ULVAC)

Keywords:nitride semiconductor,patterned sapphire subtrate,wet etched process