[12p-B4-1~10] Progress of power semiconductors, toward wide band-gap materials beyond silicon

[12p-B4-4] Crystal growth of single crystals for power devices

〇Koichi Kakimoto¹, Bing Gao¹, Xin Liu¹, Satoshi Nakano¹, Shin-ichi NIshizawa², Hirofumi Harada³, Yoshiji Miyamura³, Takafumi Sekiguchi³, Yoshihiro Kangawa¹ (1.RIAM, Kyushu Univ., 2.AIST, 3.NIMS)

Keywords:power devices