[12p-D1-1~12] Valence-electron metamorphology in oxide semiconductors

[12p-D1-5] ZnO-based semiconductors with tunable band gap over the entire visible spectrum

〇Naho Itagaki^{1, 2}, Koichi Matsushima¹, Tomoaki Ide¹, Daisuke Yamashita¹, Hyunwoong Seo¹, Kazunori Koga¹, Shiratani Masaharu¹ (1.Kyushu Univ., 2.JST PRESTO)

Keywords:Oxide semiconductor,band gap,sputtering