Formation of Si4O5N3 layer on SiC substrate in ultra-high vacuum

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.5 Surface Physics, Vacuum

Thu. Mar 12, 2015 1:15 PM - 5:00 PM D13 (16-502)

3:45 PM - 4:00 PM

〇Tomomi Matsuo¹, Junya Shirahama¹, Yuki Takeshima¹, Ryuzen Takeo¹, Takeshi Nakagawa¹, Seigi Mizuno¹, C. N. Xu¹ (1.Kyushu Univ.)

Keywords:SiC,Low energy electron diffraction