[12p-D6-1~13] 17.4 Device applications

△ [12p-D6-2] High temperature during ZnO/C mask for patterning of carbon nanotube forest formed on silicon carbide

〇Masafumi Inaba¹, Chih-Yu Lee¹, Kazuma Suzuki¹, Megumi Shibuya¹, Miho Myodo¹, Yu Hirano¹, Wataru Norimatsu², Michiko Kusunoki², Hiroshi Kawarada¹ (1.Waseda Univ., 2.Nagoya Univ.)

Keywords:carbon nanotube,zinc oxide,silicon carbide