[12p-D7-1~22] 17.1 Growth technology

[12p-D7-8] High Quality Graphene Growth using SiC single-crystalline thin films on Hybrid Device Wafers

〇Hirokazu Fukidome¹, Shoji Akiyama², Keiichiro Tashima¹, Kazutoshi Funakubo¹, Maki Suemitsu¹, Shigeru Konishi², Hiroshi Mogi², Makoto Kawai², Yoshihiro Kubota², Koji Horiba³, Hiroshi Kumigashira³ (1.RIEC, Tohoku Univ., 2.ShinEtsu Chemical, 3.KEK)

Keywords:epitaxial graphene,SiC singlecrystalline thin film,Bonded Substrate