[12p-P16-1~19] 15.4 III-V-group nitride crystals

[12p-P16-4] GaN Single Layer Growth on GaN Substrate with Low C Impurity Density by MOCVD

〇Guanxi Piao^{1, 2}, Kazutada Ikenaga¹, Yoshiki Yano¹, Hiroki Tokunaga¹, Akira Mishima², Yuzabubro Ban², Toshiya Tabuchi¹, Kou Matsumoto¹ (1.TNSC, 2.TN CSE LTD.)

Keywords:GaN,Low C impurity density,MOCVD