[12p-P17-1~7] 15.5 Group IV crystals and alloys

[12p-P17-4] Influence of growth rate on surface morphologies of tensile-strained Si/relaxed SiGe/Si(110) heterostructures

〇naoto utsuyama¹, kei sato¹, keisuke arimoto¹, junji yamanaka¹, kiyokazu nakagawa¹, noritaka usami², kentaro sawano³ (1.CCST Univ. of Yamanashi, 2.Nagoya Univ., 3.ARL Tokyo City Univ.)

Keywords:semiconductor,Si,growth rate