The 62nd JSAP Spring Meeting, 2015

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Poster presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[12p-P8-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Mar 12, 2015 1:30 PM - 3:30 PM P8 (Gymnasium)

1:30 PM - 3:30 PM

[12p-P8-3] Investigation of strain in β-FeSi2 epitaxial films grown on SiGe(111)

〇Hiroaki Tsukamoto1, Syogo Soubaru1, Haruki Yamaguchi1, Sumito Ogata1, Tetsu Hattori1, Takahiko Higashi1, Yoshikazu Terai1 (1.Kagoshima Univ.)

Keywords:Semiconducting silicide