[13a-A25-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [13a-A25-12] Growth of CaSi₂ layers on Si substrates induced by Kirkendall void formation

Xiang Meng¹, Akiko Ueki², Haruo IMAGAWA², Hiroshi ITAHARA², 〇Hirokazu Tatsuoka³ (1.Graduate School of Science and Technology, Shizuoka Univ., 2.Toyota Central R&D Labs., Inc., 3.Graduate School of Engineering, Shizuoka Univ.)

Keywords:silicide semiconductor