The 62nd JSAP Spring Meeting, 2015

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[13a-A25-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Mar 13, 2015 9:00 AM - 12:30 PM A25 (6A-218)

9:30 AM - 9:45 AM

[13a-A25-3] Characteristic evaluation of Mg2Si film formed by annealing of Mg/Si laminate structure

〇Hiroki Hasegawa1, Kuniyuki Kakushima2, Yoshinori Kataoka2, Akira Nishiyam2, Nobuyuki Sugii2, Hitoshi Wakabayashi2, Kazuo Tsutsui2, Kenji Natori1, Hiroshi Iwai1 (1.Tokyo Tech FRC, 2.IGSSE)

Keywords:silicide semiconductor,magnesium silicide,tunnel FET